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june 2006 rev 2 1/14 14 stb22ns25z - STP22NS25Z n-channel 250v - 0.13 ? - 22a - to-220 / d 2 pa k zener-protected mesh overlay? power mosfet general features 100% avalanche tested extremely high dv/dt capability description using the latest high voltage mesh overlay? process, stmicroelectronics has designed an advanced family of power mosfets with outstanding performance. the new patented strip layout coupled with the company?s proprietary edge termination structure, makes it suitable in coverters fo r lighting applications. applications switching application internal schematic diagram type v dss r ds(on) i d stb22ns25z 250v <0.15 ? 22a STP22NS25Z 250v <0.15 ? 22a 1 2 3 1 3 to-220 d2pak www.st.com order codes part number marking package packaging stb22ns25z b22ns25z d2pak tape & reel STP22NS25Z p22ns25z to-220 tube
contents stb22ns25z - STP22NS25Z 2/14 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
stb22ns25z - STP22NS25Z electrical ratings 3/14 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 250 v v dgr drain-gate voltage (r gs = 20 k ? )250v v gs gate- source voltage 20 v i d drain current (continuos) at t c = 25c 22 a i d drain current (continuos) at t c = 100c 13.9 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 88 a p tot total dissipation at t c = 25c 135 w derating factor 1.07 w/c v esd(g-s) gate source esd(hbm-c=100pf, r=1.5k ?) 2500 v dv/dt (2) 2. i sd < 22a, di/dt < 200a/s, v dd = 80% v (br)dss peak diode recovery voltage slope 5 v/ns t stg storage temperature ?55 to 150 c t j max. operating junction temperature table 2. thermal data rthj-case thermal resistance junction-case max 0.93 c/w rthj-amb thermal resistance j unction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c table 3. avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 22 a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50v, r g = 47 ? ) 350 mj
electrical characteristics stb22ns25z - STP22NS25Z 4/14 2 electrical characteristics (tcase =25c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250a, v gs = 0 250 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125c 10 100 a a i gss gate-body leakage current (v ds = 0) v gs = 18v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10v, i d = 11a 0.13 0.15 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5 % forward transconductance v ds > i d(on) x r ds(on)max, i d =11a 22 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1mhz, v gs = 0 2400 340 120 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 200v, i d = 20a, v gs = 10v (see figure 13) 108 11 40 151 nc nc nc
stb22ns25z - STP22NS25Z electrical characteristics 5/14 table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r turn-on delay time rise time v dd = 125v, i d = 11a r g =4.7 ? v gs = 10v (see figure 12) 20 30 ns ns t d(voff) t f turn-off- delay time fall time v dd = 125v, i d = 11 a, r g =4.7 ?, v gs = 10v (see figure 12) 100 78 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v clamp = 200v, i d = 22 a, r g =4.7 ?, v gs = 10v (see figure 12) 37 65 110 ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current 22 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) 88 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5 % forward on voltage i sd = 22 a, v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 22 a, di/dt = 100a/s v dd = 50v, t j = 150c (see figure 17) 292 3065 21 ns nc a table 8. gate-source zener diode symbol parameter test conditions min typ max unit bv gso (1) 1. the built-in back-to-back zener diodes have specif ically been designed to enhanc e not only the device?s esd capability, but also to make th em safely absorb possible voltage tr ansients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protec t the device?s integrity. these int egrated zener diodes thus avoid the usage of external components gate-source breakdown voltage igs= 500a (open drain) 20 v
electrical characteristics stb22ns25z - STP22NS25Z 6/14 2.1 electrical characteri stics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characterisics figure 4. transfer characteristics figure 5. transconductance figure 6. static drain-source on resistance
stb22ns25z - STP22NS25Z electrical characteristics 7/14 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. source-drain diode forward characteristics
test circuits stb22ns25z - STP22NS25Z 8/14 3 test circuits figure 12. switching times test circuit for resistive load figure 13. gate charge test circuit figure 14. test circuit for inductive load switching and diode recovery times figure 15. unclamped inductive load test circuit figure 16. unclamped inductive wavefo rm figure 17. switching time waveform
stb22ns25z - STP22NS25Z package mechanical data 9/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data stb22ns25z - STP22NS25Z 10/14 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
stb22ns25z - STP22NS25Z package mechanical data 11/14 to-247 mechanical data 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r0.4 0.015 v2 0o 4o d 2 pak mechanical data 3
packaging mechanical data stb22ns25z - STP22NS25Z 12/14 5 packaging mechanical data tape and reel shipment d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
stb22ns25z - STP22NS25Z revision history 13/14 6 revision history table 9. date revision changes 06-jun-2006 2 new template
stb22ns25z - STP22NS25Z 14/14 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorize representative of st, st products are not designed, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems, where failure or malfunction may result in personal injury, death, or severe property or environmental damage. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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